1/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.09 - rev.b each lead has same dimensions abbreviated symbol : r1m mmsta13 (1)emitter (2)base (3)collector ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 npn small signal transistor mmsta13 ? features ? dimensions (unit : mm) (1) high current gain. ? packaging specifications package code taping basic ordering unit (pieces) mmsta13 t146 3000 type ? absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ces v ebo p c tj tstg 30 v v v a c c 30 10 0.3 i c 0.2 w 0.35 w 150 ? 55 to 125 symbol limits unit ? mounted on a 7 5 0.6 mm ceramic substrate ? ? electrical characteristics (ta=25 c) collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base cutoff current emitter-base cutoff current collector-emitter saturation voltage base-emitter voltage dc current transfer ratio collector output capacitance ? ? ? pulsed parameter symbol bv ces bv ceo bv ebo i ceo h fe f t cob min. 30 30 10 ? 5000 125 ? ? ? ? ? ? ? 5.4 ? ? ? 0.1 ? ? ? vi c = 100 a i c = 10 a i e = 10 a v eb = 10v v ce = 5v, i c = 10ma 10000 ?? v ce = 5v, i c = 100ma v ce = 5v, i e = ? 10ma, f = 100mhz v cb = 10v, f = 100khz, i e = 0 v v i cbo ?? 0.1 v cb = 30v a a v ce(sat) ? ? 1.5 i c /i b = 100ma/ 100 a v ? mhz pf typ. max. unit conditions v be(on) ? ? 2.0 v ce = 5v, i c = 100ma v transition frequency
mmsta13 data sheet 2/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.09 - rev.b ? electrical characteristics curves 0 1.0 2.0 collector current : ic (ma) collector - emitter voltage : v ce (v) 0 100 200 300 400 500 fig.1 typical output characteristics ( ) ta =25 c i b = 0 a 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 1.0 2.0 3.0 4.0 5.0 collector current : ic (ma) collector - emitter voltage : v ce (v) 0 20 40 60 80 100 fig.2 typical output characteristics ( ? ) ta =25 c i b = 0 a 0.2 0.4 0.8 1.2 1.6 1.8 2.0 2.4 base emitter voltage : v be(on) (v) collector current : i c (ma) 2.2 2.0 1.8 1.6 1.4 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.2 1.0 0.8 0.6 0.4 fig.3 base emitter 'on' voltage vs. collector current ta =25 c v ce = 5v 0.1 5.0 10 20 50 100 200 500 1000 0.2 0.5 1.0 2.0 dc current gain : h fe collector current : i c (ma) 1k 2k 5k 10k 20k 50k 100k fig.4 dc current gain vs. collector current ( ) v ce = 10v 5v 3v ta =25 c 0.1 5.0 10 20 50 100 200 500 1000 0.2 0.5 1.0 2.0 dc current gain : h fe collector current : i c (ma) 1k 2k 5k 10k 20k 50k 100k fig.5 dc current gain vs. collector current ( ? ) ta =25 c v ce = 5v ta =25 c ta = ? 55 c collector emitter saturation voltage : v ce(sat) (v) collector current : i c (ma) fig.6 collector emitter saturation voltage vs. collector current 1.8 1.6 1.4 1.2 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 0.8 0.6 0.4 0.2 0 ta =25 c i c /i b = 1000 base emitter saturation voltage : v be(sat) (v) collector current : i c (ma) 2.2 2.0 1.8 1.6 1.4 12 51020 50 100 200 500 1000 1.2 1.0 0.8 0.6 0.4 fig.7 base emitter saturation voltage vs. collector current ta =25 c i c /i b = 1000 1.0 10 20 50 100 200 500 1000 5.0 2.0 current gain-bandwidth product (mhz) collector current : i c (ma) 10 20 50 100 200 500 1000 fig.8 current gain-bandwidth product vs. collector current ta =25 c v ce = 5v 0.5 12 51020 50 capacitance (pf) reverse bias voltage (v) 1 2 5 10 20 50 100 fig.9 capacitance vs. reverse bias voltage ta =25 c f=1mhz cib cob
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